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PD 91469B
IRG4PC50FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
* Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-247AC package
C
Fast CoPack IGBT
VCES = 600V
G E
VCE(on) typ. = 1.45V
@VGE = 15V, IC = 39A
n-cha nn el
Benefits
* Generation -4 IGBT's offer highest efficiencies available * IGBT's optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.
Max.
600 70 39 280 280 25 280 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
Parameter
RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-------------------------
Typ.
----------0.24 ----6 (0.21)
Max.
0.64 0.83 -----40 ------
Units
C/W
g (oz)
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IRG4PC50FD
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
VCE(on)
VGE(th) VGE(th)/TJ gfe ICES V FM IGES
Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage ---Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ---Forward Transconductance T 21 Zero Gate Voltage Collector Current ------Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ----
Typ. Max. Units ------V 0.62 ---- V/C 1.45 1.6 1.79 ---V 1.53 ------- 6.0 -14 ---- mV/C 30 ---S ---- 250 A ---- 6500 1.3 1.7 V 1.2 1.5 ---- 100 nA
Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 39A VGE = 15V IC = 70A See Fig. 2, 5 IC = 39A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 39A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 25A See Fig. 13 IC = 25A, TJ = 150C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 190 28 65 55 25 240 140 1.5 2.4 3.9 59 27 400 260 6.5 13 4100 250 49 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 290 IC = 39A 42 nC VCC = 400V See Fig. 8 97 VGE = 15V ---TJ = 25C ---ns IC = 39A, VCC = 480V 360 VGE = 15V, RG = 5.0 210 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 5.0 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 39A, VCC = 480V ---VGE = 15V, RG = 5.0 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 75 ns TJ = 25C See Fig. 160 TJ = 125C 14 IF = 25A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 VR = 200V 375 nC TJ = 25C See Fig. 1200 TJ = 125C 16 di/dt 200A/s ---- A/s TJ = 25C See Fig. ---TJ = 125C 17
2
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IRG4PC50FD
50
40
Load Current ( A )
D u ty c yc le: 50 % T J = 1 25C T sink = 9 0 C G a te drive as spe cifie d T urn-on loss es includ e e ffects of reverse re c overy Pow er D iss ipation = 40W
6 0% of rate d vo lta g e
30
20
10
0 0.1 1 10
A
100
f, Frequenc y (k Hz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , C o lle ctor-to-E m itter Cu rre n t (A )
1000
1000
100
I C , C ollec to r-to -Em itter C urre n t (A)
100
T J = 1 50 C TJ = 2 5C
10
T J = 1 5 0 C
10
T J = 2 5 C
1 0.1 1
VG E = 1 5 V 2 0 s P U L S E W ID T H A
10
1 5 6 7 8 9
V CC = 5 0 V 5 s P U L S E W ID TH A
10 11 12
VC E , C o lle c to r-to -E m itte r V o lta g e (V )
VG E , G a te -to -E m itte r V o lta g e (V )
Fig. 2 - Typical Output Characteristics www.irf.com
Fig. 3 - Typical Transfer Characteristics 3
IRG4PC50FD
70
M aximum D C Collector Current (A )
60
V C E , C ollec to r-to-Em itter V oltage (V)
V G E = 15 V
2.5
V G E = 1 5V 8 0 s P U L S E W ID TH
50
I C = 78 A
2.0
40
30
I C = 39 A
1.5
20
10
I C = 20A
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 100 120
A
140 160
T C , C ase Tem perature (C)
T J , Ju n c tio n Te m p e ra tu re (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
Therm al Re spo nse (Z thJC )
D = 0 .5 0
0 .2 0
0 .1
0 .1 0 0 .0 5
PD M
t
S IN G L E P U L S E (T H E R M A L R E S P O N S E )
1
t2
0 .0 2 0 .0 1
N o te s : 1 . D u ty fa c to r D = t
1
/ t2
0 .0 1 0 .0 0 0 0 1
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R ectangular P ulse D uration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
IRG4PC50FD
8000 VGE = 0V f = 1 MHz 20
Coes = Cce + Cgc
V G E , G a te -to -E m itte r V oltage (V )
A
Cies = Cge + Cgc + Cce Cres = Cce
SHORTED
V CE = 4 0 0 V IC = 39A
16
C, Capacitance (pF)
6000
C ies
4000
12
C oes
2000
8
Cres
4
0 1 10
100
0 0 40 80 120 160
A
200
V C E , Collector-to-Emitter Voltage (V)
Q g , To ta l G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
5.00
Total Switchig Losses (mJ)
4.50
Total Switchig Losses (mJ)
V C C = 480V V G E = 15V T J = 25C I C = 39A
100
R G = 5.0 V G E = 15V V C C = 480V
I C = 78A
10
I C = 39A
4.00
I C = 20A
3.50 0 10 20 30 40 50
A
60
1 -60 -40 -20 0 20 40 60 80 100 120 140
A 160
R G , Gate Resistance ( )
TJ , Junction Temperature (C)
Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com
Fig. 10 - Typical Switching Losses vs. Junction Temperature 5
IRG4PC50FD
16 12
I C , C olle ctor-to-E mitte r C urren t (A)
Total Switchig Losses (mJ)
RG TJ V CC V GE
= 5.0 = 150C = 480V = 15V
1000
VG E E 2 0V G= T J = 12 5 C
S A FE O P E R A TIN G A R E A
100
8
10
4
0 0 20 40 60 80
A
1 1 10 100 1000
I C , Collector-to-Emitter Current (A )
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
TJ = 1 50 C TJ = 1 25 C
10
TJ = 25 C
1 0.6 1.0 1.4 1.8 2.2 2.6
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
IRG4PC50FD
140 100 120
VR = 2 0 0 V TJ = 125C TJ = 25C
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
100
t rr - (ns)
I IR R M - (A )
IF = 50A I F = 25 A
10
80
I F = 50A I F = 25A
I F = 1 0A
60
IF = 10A
40
20 100
di f /dt - (A/s)
1000
1 100
1000
d i f /d t - (A / s )
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1500
10000
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
1200
VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C
900
I F = 5 0A
d i(re c )M /d t - (A / s )
Q R R - (n C )
1000
I F = 10 A
600
I F = 2 5A
I F = 25 A
300
I F = 1 0A
0 100
I F = 5 0A
1000 100 100 1000
d i f /d t - (A / s )
d i f /d t - (A / s )
Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com
Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7
IRG4PC50FD
90% Vge +Vge
Same ty pe device as D .U.T.
Vce
Ic 80% of Vce 430F D .U .T.
10% Vce Ic
9 0 % Ic 5 % Ic
td (o ff)
tf
Eoff =
t1 + 5 S V c e ic d t t1
Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg
trr Ic
Q rr =
trr id d t tx
tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic
1 0 % Irr V cc
V pk Irr
D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4
E re c =
t4 V d id d t t3
t1
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4PC50FD
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 6000 F 100 V Vc*
D.U.T.
RL= 0 - 480V
480V 4 X IC @25C
Figure 19. Clamped Inductive Load Test Circuit
Figure 20. Pulsed Collector Current Test Circuit
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IRG4PC50FD
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 5.0 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.
Notes:
Case Outline TO-247AC
3 .6 5 ( .1 4 3 ) 3 .5 5 ( .1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 1
-D-
1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B-
5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4
N OTES: 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C .
2X
5 .5 0 (.2 1 7 ) 4 .5 0 (.1 7 7 )
2
3
-C-
LEAD 1234-
A S S IG N M E N T S GATE C OLLE C TO R E M IT T E R C OLLE C TO R
*
1 4 .80 ( .58 3) 1 4 .20 ( .55 9)
4.3 0 (.1 70) 3.7 0 (.1 45)
0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 (.1 0 2 ) 2 .2 0 (.0 8 7 )
*
2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.21 5)
L O N G E R L E A D E D (2 0 m m ) V E R S IO N A V A IL A B L E (T O -2 4 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER
3X
1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M
C AS
2X
3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n s io n s in M illim ete rs a n d (In c h e s )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00
10
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